Click to enable/disable essential site cookies. GaN E-HEMT fast switching, low output capacitance (Coss), and zero reverse recovery charge (QRR) enable a new level of performance for Class D audio amplifiers. However, adequate thermal management (forced air, running at low frequency etc) should be followed to ensure that the maximum operating temperature specification  for the on-board components is not exceeded. The EVM is not suitable for transient measurements as it’s an open loop board. LMG1205HBEVM Order now. Overview. But this will always prompt you to accept/refuse cookies when revisiting our site. Transphorm Releases 4 kW Analog-controlled Bridgeless Totem-pole GaN Evaluation Board. GS65011-EVBEZ评估板允许用户评估氮化镓系统 (GaN Systems)的EZDrive™方案。EZDrive™是一种经济简便的GaN驱动方案，利用标准的已经集成了MOSFET驱动的电路控制芯片来直接驱动GaN器件。这种方案可应用与各种功率等级，开关频率和任何LLC和PFC的控制器。 GaN Board Evaluation. We provide you with a list of stored cookies on your computer in our domain so you can check what we stored. The GS66508T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. A half-bridge evaluation board featuring GaN Systems 650V E-HEMT GS66508T (30A/50mΩ) transistor and 2.5A gate drive optocoupler, ACPL-P346 will be used to perform the slew rate, switching power loss and efficiency test. The TDTTP4000W066B 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high efficiency single-phase AC-DC conversion. Terms & Conditions | Privacy Policy. The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. 80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. The GaN Systems GSWP300W-EVBPA evaluation board is a 300W, 6.78 MHz Class EF2 power amplifier for wireless power transfer. The module is capable of delivering a maximum of 10A of current. GaN Systems has announced the availability of a new evaluation board using what it believes is the world's fastest combination of GaN power transistors and power drivers. You can check these in your browser security settings. “Power electronic engineers have always used analog control standard CCM/CRM boost PFC converters. See terms of use. LMG34XX-BB-EVM – LMG34xx GaN system-level evaluation motherboard for LMG341x family. GaN Systems and ON Semiconductor Release 100V High-Speed, Half Bridge Evaluation Board. Why do I need this? This 600V gallium nitride (GaN) half-bridge evaluation board enables easy, rapid setup and test of CoolGaN™ transistors. Otherwise you will be prompted again when opening a new browser window or new a tab. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. GaN Systems and On Semiconductor have teamed up to design a 1MHz half bridge evaluation board using a GaN daughter board with a 650 V, 30 A GaN E-HEMT switch and a high speed gate driver board. Note that blocking some types of cookies may impact your experience on our websites and the services we are able to offer. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches We may request cookies to be set on your device. Schematic Diagram The new GS-EVB-AUD-xxx1-GS GaN-based evaluation board platform provides an excellent reference design for implementing a high-performance, low-cost audio system. ​​​​​​​​. 80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. The kit provides complete out-of-the-box testing capabilities for quick implementation. No results found. GaN can improve overall system efficiency with lower on-resistance and ... ACPL-P346 can also be used to drive GaN devices. Required. The GS66508B-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. Click to enable/disable Google reCaptcha. Designed for single-phase AC-to-DC power conversion up to 4 kilowatts (kW), this board uses the bridgeless totem-pole power factor correction (PFC) topology with a traditional analog control. The new GS66508T high-current Half-Bridge Evaluation Board is available now through GaN Systems’ worldwide distributor network. Select Your IndustryConsumer ElectronicsDatacentersRenewable EnergyIndustrialAutomotiveOther. If you refuse cookies we will remove all set cookies in our domain. GaN Systems is the leader in Gallium Nitride (GaN) based power management devices, specializing in power conversion, semiconductors and transistors. If you have questions about quality, packaging or ordering TI products, see TI support. Overview. Single-Phase, 3-Level Half-Bridge Inverter, Isolated Phase-Shift Full Bridge Converter. The EVM is suitable for evaluating the performance of the LMG1205 driving a GaN half-bridge in many different DC-DC converter topologies. Based on the field properties of the basic structures, optimized detector layout of a multi-GMR sensing system can be decided to achieve accurate current sensing. Because these cookies are strictly necessary to deliver the website, refuseing them will have impact how our site functions. 该评估板展示了采用先进数字控制策略及GaN System公司的氮化镓增强型高电子迁移率晶体管，设计了高效，高功率密度的1.2千瓦无桥图腾柱PFC的性能优势及设计方案. The MDC901-EVKHB evaluation kit gives power designers a head start for design-in of the MDC901 200V GaN gate driver.The evaluation board (EVB) utilizes GaN System’s 100V enhancement mode HEMTs and Würth Elektronik components in a half-bridge configuration. Gerber Design Files. Order now. Transphorm's new analog control evaluation board eliminates need for firmware development for high efficiency AC-to-DC GaN power systems. We need 2 cookies to store this setting. We use cookies to let us know when you visit our websites, how you interact with us, to enrich your user experience, and to customize your relationship with our website. A), Simple open loop design to evaluate performance of LMG1205 driving a GaN Half-Bridge, VDD supply generated from an onboard linear regulator, Single PWM  input on board for PWM signal with < 8ns dead time, Kelvin sense capability for input and output to measure efficiency. Due to security reasons we are not able to show or modify cookies from other domains. For more information, please visit GaN Systems' website. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. Check to enable permanent hiding of message bar and refuse all cookies if you do not opt in. Evaluation board. 1.2-A, 5-A 100-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET, – LMG1205 GaN Power Stage Evaluation Module. We also use different external services like Google Webfonts, Google Maps, and external Video providers. Click on the different category headings to find out more. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. Gerber Design Files. Using GaN FETs in the fast-switching leg of the circuit and low-resistance MOSFETs in the slow-switching leg of the circuit results in improved performance and efficiency. The EPC9086 is a half-bridge board that uses one PE29102 to drive the 30V, 15A EPC2111 EPC eGaN® half bridge. Please be aware that this might heavily reduce the functionality and appearance of our site. The GS66504B-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66504B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. “Transphorm’s analog evaluation board provides an unprecedented opportunity to access our highly efficient GaN in the easiest way possible. We fully respect if you want to refuse cookies but to avoid asking you again and again kindly allow us to store a cookie for that. Privacy Policy. The GSWP100W-EVBPA includes two GS61008P 100V Gallium Nitride (GaN) on Silicon Power Enhancement-mode High Electron Mobility Transistors (E-HEMT), along with two PE29102 GaN E-HEMT drivers, in a 6.78MHz class EF2 Power Amplifier circuit. ... such as powering up and supplying chipsets—is a relatively fixed amount in any system. The TDTTP4000W066C 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high efficiency single-phase AC-DC conversion. The vertical boards can easily be adapted for horizontal mounting and can be attached to the system … You can also change some of your preferences. It can be used to estimate the performance of the half-bridge to measure efficiency. Since these providers may collect personal data like your IP address we allow you to block them here. By continuing to use our website, you acknowledge the use of cookies. GaN Systems GSWP100W-EVBPA 100W Evaluation Board is designed to support and expedite wireless power transfer applications. The 4 kW highline (180-260 V) and 2 kW lowline (90-120 V) evaluation kit does not require any DSP firmware programming, thus adapting to standard CCM boost AC-to-DC PFC power stages. GaN Systems has an evaluation board available which uses the world’s fastest combination of GaN power transistors and power drivers. GaN Systems and ON Semiconductor have teamed up to create the NCP51820 HB GaN Driver Evaluation Board (EVB), an EVB intended to replace the driver and power MOSFETs used in existing half-bridge or full-bridge power supplies.. Half-bridge evaluation board from GaN Systems and ON Semiconductor. GaN Board Evaluation. 技术亮点 “电流连续模式无桥图腾柱PFC评估板; 交流输入（85V-264伏) 1.2千万连续功率输出@240V交流输入 LMG1205 GaN Power Stage Evaluation Module. The new TDTTP4000W065AN evaluation board from Transphorm is now available and it features its latest SuperGaN Gen IV GaN technology to convert single-phase AC to DC power up to 4 kilowatts (kW), together with bridgeless totem-pole power factor correction (PFC) with traditional analog control. GaN Systems and ON Semiconductor have joint availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high speed gate driver evaluation board. You always can block or delete cookies by changing your browser settings and force blocking all cookies on this website. The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. Required. User Manual https://www.infineon.com/cms/en/product/evaluation-boards/eval_2500w_pfc_gan_a/Explore CoolGaN™ - the new power paradigm. This evaluation board demonstrates how to use the IGT40R070D1 E8220 CoolGaN™ gallium nitride transistor together with the MERUS™ IRS20957SPBF … Why do I need this? “Power electronic engineers have always used analog control standard CCM/CRM boost PFC converters. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. YesI agree that the information I provide will be used in accordance with the terms of GaN Systems. This motherboard, with power magnetics and storage capacitors, allows you to implement an open-loop power converter when supplied with a FET daughter board … This motherboard, with power magnetics and storage capacitors, allows you to implement an open-loop power converter when supplied with a FET daughter board … It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. 3600W, 385V to 52V LLC DC-DC demonstration board using CoolGaN™ 600V e-mode HEMT IGT60R070D1 . LMG1205HBEVM EU Declaration of Conformity (DoC), LMG1205 80-V, 1.2-A to 5-A, Half Bridge GaN View current list of evaluation boards >, 650 V GaN E-HEMT Daughter Board: Revision 1. The NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. Content is provided "as is" by TI and community contributors and does not constitute TI specifications. You are free to opt out any time or opt in for other cookies to get a better experience. The evaluation boards listed here have been replaced with newer versions. Transphorm, Inc. announced availability of its newest evaluation board, the TDTTP4000W065AN. These cookies are strictly necessary to provide you with services available through our website and to use some of its features. Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation, Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board, Current shunt position for switching characterization testing, Universal form factor and footprint for all products, Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN, E-HEMT in traditional through-hole type power supply board. The 4 kW highline (180-260 V) and 2 kW lowline (90-120 V) evaluation kit does not require any DSP firmware programming, thus adapting to standard CCM boost AC-to-DC PFC power stages. Driver with Integrated Bootstrap Diode datasheet (Rev. The vertical mounting feature of these half bridge platforms is beneficial in high-power systems more than 5kW. Switch, DC-link capacitor and AC node currents in a GaN Systems evaluation board are experimentally sensed with the multi-GMR system. The EVAL_AUDAMP24 e-mode GaN HEMT-based evaluation board from Infineon Technologies is a 2-channel, 225W/ch (4Ω at ±43V) or 250 W/ch (8Ω at ±63V) half-bridge class D audio power amplifier for high-end Hi-Fi audio systems. Changes will take effect once you reload the page. The half bridge evaluation assemblies come in a 120A / 13mΩ and 60A / 25mΩ variants. If the backside of the daughter board is marked with the GaN System’s logo, you have an earlier version, the GS66508T-EVBDB, which is covered by this set of documents. A fabless power semiconductor company, GaN Systems is headquartered in Ottawa, Canada. On-board voltage regulators create +5 V for the logic circuit and +6.5 V for the gate driver. If the backside of the daughter board is marked with the GaN System’s logo, you have an earlier version, the GS66508T-EVBDB, which is covered by this set of documents. TI's Standard Terms and Conditions for Evaluation Items apply. The evaluation boards listed here have been replaced with newer versions. Evaluation board. *Requires a motherboard (GS665MB-EVB) The evaluation boards listed here have been replaced with newer versions. Schematic Diagram Image (modified) used courtesy of GaN Systems . For more information, please visit GaN Systems' website. Evaluation Boards; EVAL_3K6W_LLC_GAN; EVAL_3K6W_LLC_GAN. Please clear your search and try again. LMG34XX-BB-EVM – LMG34xx GaN system-level evaluation motherboard for LMG341x family. This evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or … The device demonstrates how to … User’s Guide OTTAWA, Ontario, December 3, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor (OnSemi), a world-leading supplier of power … The Evaluation Board operates in three modes: pulse test mode, buck/standard half-bridge mode, and boost mode.